Method for calibrating a metrology tool

ABSTRACT

A method and apparatus for calibrating a metrology tool are disclosed. The apparatus includes a substrate having at least one calibration site formed thereon. The calibration site includes a pattern of cells that have at least one feature disposed in a surface of the substrate. The feature provided for measurement by a step height metrology tool and a phase metrology tool to calibrate the step height and phase metrology tools.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. patent applicationSer. No. 11/332,106 filed Jan. 13, 2006, now U.S. Pat. No. 7,663,156;which is a continuation of International Patent Application No.PCT/US04/23070 filed Jul. 16, 2004, which designates the United Statesand claims priority to U.S. Provisional Application No. 60/488,150 filedJul. 17, 2003; which are incorporated herein by reference in theirentirety.

TECHNICAL FIELD OF THE INVENTION

The present invention relates in general to semiconductor devicemanufacturing and, more particularly to a method and apparatus forcalibrating a metrology tool.

BACKGROUND OF THE INVENTION

As semiconductor device manufacturers continue to produce smallerdevices, the requirements for photomasks used in the fabrication ofthese devices continue to tighten. Photomasks, also known as reticles ormasks, typically consist of substrates (e.g., high-purity quartz orglass) that have a non-transmissive layer (e.g., chrome) formed on thesubstrate. The non-transmissive layer includes a pattern representing acircuit image that may be transferred onto a semiconductor wafer in alithography system. As feature sizes of semiconductor devices decrease,the corresponding circuit images on the photomask also become smallerand more complex. Consequently, the quality of the mask has become oneof the most crucial elements in establishing a robust and reliablesemiconductor fabrication process.

The quality of a photomask is typically controlled by a specificationthat provides the requirements that a photomask must meet in order to beused to fabricate semiconductor devices on a wafer. For example, aspecification may include the requirements for pattern positionaccuracy, feature size control, defect density and phase shift tolerancefor a specific manufacturing process.

The pattern position accuracy, feature size control and phase shifttolerance on an individual photomask may be measured by a metrologytool. Typically, a metrology tool should have no more than ten percenterror relative to the specification in order to provide qualityassurance. A metrology tool, therefore, must be able to precisely andaccurately measure a feature on a photomask in order to meet therequirements in the specification.

Standards used to calibrate different metrology tools have been createdin order to ensure the precision and accuracy of the measurementsobtained by the metrology tools. Currently separate standards exist formetrology tools, such as a profilometer and an atomic force microscope(AFM), that measure the vertical profile of a feature on a substrate orwafer. For example, a chrome pattern on an etched quartz substrate maybe used for the profilometer and a platinum coated SiO₂ pattern on asilicon substrate may be used for the AFM. These standards may be usedto calibrate the tools to a specification for a specific manufacturingprocess. Unlike profilometers and AFMs, no standard currently exists formetrology tools that measure a phase shift created by a photomask.Currently, a manufacturer may use control vehicles having arbitraryphase shifts to calibrate their phase metrology tools without knowing ifthe original phase of the control vehicle was correct. This approach hastwo problems. First, the accuracy of the calibration is about twodegrees because the lithography is not very sensitive to phase error.Second, the results may be effected by spherical lens error in thelithography tool.

SUMMARY OF THE INVENTION

In accordance with teachings of the present invention, disadvantages andproblems associated with calibrating a metrology tool have beensubstantially reduced or eliminated. In a particular embodiment, afeature included on a standard may be measured by a step heightmetrology tool and a phase metrology tool to calibrate the step heightand phase metrology tools.

In accordance with one embodiment of the present invention, acalibration standard includes a substrate having at least onecalibration site formed thereon. The calibration site includes a patternof cells that have at least one feature disposed in a surface of thesubstrate. The feature is provided for measurement by a step heightmetrology tool and a phase metrology tool to calibrate the step heightand phase metrology tools.

In accordance with another embodiment of the present invention, acalibration standard includes a substrate having at least onecalibration site formed thereon. The calibration site includes a patternof cells having at least one feature disposed in a surface of thesubstrate. The feature is provided for measurement by a phase metrologytool to obtain a measured phase shift used to calibrate the phasemetrology tool.

In accordance with a further embodiment of the present invention, amethod for calibrating a metrology tool includes providing a substrateincluding at least one calibration site having a pattern of cells andproviding at least one feature disposed in a surface of the substrate ineach of the cells. The feature is measured using a phase metrology toolto provide a measured phase shift. The measured phase shift is comparedwith an initial phase shift and the phase metrology tool is adjusted ifthe measured phase shift does not equal the initial phase shift.

Important technical advantages of certain embodiments of the presentinvention include a standard that may be used to calibrate multipletypes of metrology tools. The standard includes a pattern of featuresprovided for measurement on a step height metrology tool that measuresthe profile of the features and a phase metrology tool that measures thephase shift associated with the features. The addition of a phase shiftstandard allows manufacturers to establish control of phasespecifications on phase shift photomasks manufactured in differentmanufacturing facilities.

Another important technical advantage of certain embodiments of thepresent invention includes a standard that improves the precision andaccuracy of the data collected by a phase metrology tool. Traditionally,phase metrology tools are calibrated by using control vehicles havingarbitrary phase shifts. Manufacturers, however, may not know if thephase shift of the control vehicle was determined correctly. Thestandard of the present invention may include features that may bedirectly measured such that the phase metrology tool may be directlycalibrated to a known phase shift.

A further important technical advantage of certain embodiments of thepresent invention includes a standard that reduces calibrationvariations between different metrology tools. The standard containsfeatures that may be measured by any step height and phase metrologytools in a single manufacturing facility or throughout multiplemanufacturing facilities. Because the same standard may be used tocalibrate each tool, the number of standards that need to bemanufactured may be reduced and measurement variations due to the use ofdifferent calibration standards may be eliminated.

All, some, or none of these technical advantages may be present invarious embodiments of the present invention. Other technical advantageswill be readily apparent to one skilled in the art from the followingfigures, descriptions, and claims.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete and thorough understanding of the present embodimentsand advantages thereof may be acquired by referring to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numbers indicate like features, and wherein:

FIG. 1 illustrates a cross-sectional view of a photomask assemblymanufactured according to teachings of the present invention;

FIG. 2 illustrates a top view of a standard used to calibrate ametrology tool in accordance with teachings of the present invention;

FIG. 3 illustrates a pattern of cells formed as a portion of acalibration site on a standard used to calibrate a metrology tool inaccordance with teachings of the present invention;

FIG. 4 illustrates a top view of features formed in a cell on a standardused to calibrate a metrology tool in accordance with teachings of thepresent invention;

FIG. 5 illustrates a cross sectional view of profile features formed ina cell on a standard used to calibrate a metrology tool in accordancewith teachings of the present invention;

FIG. 6 illustrates a top view of phase features formed in a cell on astandard used to calibrate a phase metrology tool in accordance withteachings of the present invention; and

FIG. 7 illustrates a top view of a checkerboard feature formed in a cellon a standard used to calibrate a metrology tool in accordance withteachings of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Preferred embodiments of the present invention and their advantages arebest understood by reference to FIGS. 1 through 7, where like numbersare used to indicate like and corresponding parts.

FIG. 1 illustrates a cross-sectional view of photomask assembly 10qualified by a metrology tool. Photomask assembly 10 includes pellicleassembly 14 mounted on photomask 12. Substrate 16 and patterned layer 18form photomask 12, also known as a mask or reticle, that may have avariety of sizes and shapes, including but not limited to round,rectangular, or square. Photomask 12 may also be any variety ofphotomask types, including, but not limited to, a one-time master, afive-inch reticle, a six-inch reticle, a nine-inch reticle or any otherappropriately sized reticle that may be used to project an image of acircuit pattern onto a semiconductor wafer. Photomask 12 may further bea binary mask, a phase shift mask (PSM) (e.g., an alternating aperturephase shift mask, also known as a Levenson type mask), an opticalproximity correction (OPC) mask or any other type of mask suitable foruse in a lithography system.

Photomask 12 includes patterned layer 18 formed on a surface ofsubstrate 16 that, when exposed to electromagnetic energy in alithography system, projects a pattern onto a surface of a semiconductorwafer (not expressly shown). Substrate 16 may be a transparent materialsuch as quartz, synthetic quartz, fused silica, magnesium fluoride(MgF₂), calcium fluoride (CaF₂), or any other suitable material thattransmits at least seventy-five percent (75%) of incident light having awavelength between approximately 10 nanometers (nm) and approximately450 nm. In an alternative embodiment, substrate 16 may be a reflectivematerial such as silicon or any other suitable material that reflectsgreater than approximately fifty percent (50%) of incident light havinga wavelength between approximately 10 nm and 450 nm.

Patterned layer 18 may be a metal material such as chrome, chromiumnitride, a metallic oxy-carbo-nitride (e.g., MOCN, where M is selectedfrom the group consisting of chromium, cobalt, iron, zinc, molybdenum,niobium, tantalum, titanium, tungsten, aluminum, magnesium, andsilicon), or any other suitable material that absorbs electromagneticenergy with wavelengths in the ultraviolet (UV) range, deep ultraviolet(DUV) range, vacuum ultraviolet (VUV) range and extreme ultravioletrange (EUV). In an alternative embodiment, patterned layer 18 may be apartially transmissive material, such as molybdenum silicide (MoSi),which has a transmissivity of approximately one percent (1%) toapproximately thirty percent (30%) in the UV, DUV, VUV and EUV ranges.

Frame 20 and pellicle film 22 may form pellicle assembly 14. Frame 20 istypically formed of anodized aluminum, although it could alternativelybe formed of stainless steel, plastic or other suitable materials thatdo not degrade or outgas when exposed to electromagnetic energy within alithography system. Pellicle film 22 may be a thin film membrane formedof a material such as nitrocellulose, cellulose acetate, an amorphousfluoropolymer, such as TEFLON® AF manufactured by E. I. du Pont deNemours and Company or CYTOP® manufactured by Asahi Glass, or anothersuitable film that is transparent to wavelengths in the UV, DUV, EUVand/or VUV ranges. Pellicle film 22 may be prepared by a conventionaltechnique such as spin casting.

Pellicle film 22 protects photomask 12 from contaminants, such as dustparticles, by ensuring that the contaminants remain a defined distanceaway from photomask 12. This may be especially important in alithography system. During a lithography process, photomask assembly 10is exposed to electromagnetic energy produced by a radiant energy sourcewithin the lithography system. The electromagnetic energy may includelight of various wavelengths, such as wavelengths approximately betweenthe I-line and G-line of a Mercury arc lamp, or DUV, VUV or EUV light.In operation, pellicle film 22 is designed to allow a large percentageof the electromagnetic energy to pass through it. Contaminants collectedon pellicle film 22 will likely be out of focus at the surface of thewafer being processed and, therefore, the exposed image on the wafershould be clear. Pellicle film 22 formed in accordance with theteachings of the present invention may be satisfactorily used with alltypes of electromagnetic energy and is not limited to lightwaves asdescribed in this application.

Photomask 12 may be formed from a photomask blank using a standardlithography process. In a lithography process, a mask pattern file thatincludes data for patterned layer 18 may be generated from a mask layoutfile. In one embodiment, the mask layout file may include polygons thatrepresent transistors and electrical connections for an integratedcircuit. The polygons in the mask layout file may further representdifferent layers of the integrated circuit when it is fabricated on asemiconductor wafer. For example, a transistor may be formed on asemiconductor wafer with a diffusion layer and a polysilicon layer. Themask layout file, therefore, may include one or more polygons drawn onthe diffusion layer and one or more polygons drawn on the polysiliconlayer. The polygons for each layer may be converted into a mask patternfile that represents one layer of the integrated circuit. Each maskpattern file may be used to generate a photomask for the specific layer.In some embodiments, the mask pattern file may include more than onelayer of the integrated circuit such that a photomask may be used toimage features from more than one layer onto the surface of asemiconductor wafer.

The desired pattern may be imaged into a resist layer of the photomaskblank using a laser, electron beam or X-ray lithography system. In oneembodiment, a laser lithography system uses an Argon-Ion laser thatemits light having a wavelength of approximately 364 nanometers (nm). Inalternative embodiments, the laser lithography system uses lasersemitting light at wavelengths from approximately 150 nm to approximately300 nm. Photomask 12 may be fabricated by developing and etching exposedareas of the resist layer to create a pattern, etching the portions ofpatterned layer 18 not covered by resist, and removing the undevelopedresist to create patterned layer 18 over substrate 16.

During a manufacturing process for photomask 12, different parametersassociated with features formed in patterned layer 18 and/or substrate12 may be measured to determine if the parameters meet a semiconductormanufacturing specification. The parameters associated with photomask 12may include pattern position accuracy, also referred to as registrationor overlay, feature size control, also referred to as feature criticaldimension, and phase shift and surface characteristics. Typically, ametrology tool, such as a profilometer, atomic force microscope (AFM) ora phase metrology tool, may be used to measure different sites on aphotomask and determine if features located at a particular site meetthe requirements of the semiconductor manufacturing specification.

In order to ensure that the measurements obtained by the metrology toolare accurate and precise, a standard may be used to calibrate themetrology tool. Today, separate standards exist for profilometers andAFMs and no standard exists for phase metrology tools. The presentinvention provides a standard that may be used to calibrate a phasemetrology tool (e.g., a phase shift measurement system manufactured andsold by Lasertec), a profilometer (e.g., a P11 profilometer manufacturedand sold by KLA Tencor) and an AFM (e.g., a Dimension 9000 AFMmanufactured and sold by Digital Instruments).

The present invention further provides a standard for use in metrologytools located in different manufacturing facilities. Photomaskmanufacturers may have multiple manufacturing facilities that each havea different metrology tool to measure photomasks manufactured at thatfacility. In order to ensure that each photomask is manufactured to thesame specification, a standard for use in the metrology tools in eachmanufacturing facility may be created. The standard may include asubstrate having at least one calibration site formed in and/or on thesubstrate. The calibration site may include a pattern of cells, witheach cell having at least one feature etched into the substrate. Thedimensions, spacing between and positions of the features may be basedon a theoretical specification for a specific manufacturing process. Thesubstrate may be made of a material used as a substrate for photomask 12or a material used for a semiconductor wafer. Each manufacturingfacility may have a separate standard or a single standard may be usedby all facilities. The standard may be placed in the metrology toolsdaily, weekly or with any other suitable frequency during a specifictime period.

Each time the standard is placed in a metrology tool, the knownparameters (e.g., depth of the features and phase shift related to thedepth) may be measured to determine if the same values are obtained eachtime that the standard is measured. If the measured values are differentthan initial values, the metrology tool may be adjusted to compensatefor malfunctions and/or drifts in measuring caused by the opticalimaging equipment in the metrology tool.

Conventional standards may be unique to a specific type of metrologytool. In these instances, a different standard may be used in metrologytools that measure the same parameter of a features on a photomask(e.g., when measuring step height, one standard may be used to calibratea profilometer and another standard may be used to calibrate an AFMtool). The present invention provides a single standard, which reducesthe number of standards used by a manufacturing facility because thestandard may be used to calibrate multiple different types of metrologytools.

The single standard may be used to calibrate step height and phasemetrology tools because phase shift is related to depth of the feature(d), exposure wavelength of the lithographic or metrology tool (λ) andindex of refraction of the material that the light travels through (n).This relationship may be shown by the following formula:

$\begin{matrix}{{\Phi_{o}/(360)} = {d/\left\lbrack {\lambda/\left( {n - 1} \right)} \right\rbrack}} & (1)\end{matrix}$

A phase metrology tool may measure the average phase shift associatedwith a feature as computed from all of the illuminating radiation asrepresented by the illumination numerical aperture (NA) of the tool. Theaverage phase is related to the normal incident phase by the followingequation:Φ_(measured)=Φ_(o)m  (2)m=(1+(¼n))*(NA)²  (3)where Φ_(o) is phase determined from normal incident light, as shown bythe equation above, and NA is the illumination NA of the metrology tool.Based on the above two equations, a single standard may be used tocalibrate different types of metrology tools, such as profilometers andAFMs, that measure step height associated with a photomask and phasemetrology tools that measure phase shift associated with the photomask.

FIG. 2 illustrates a top view of standard 30 used to calibrate ametrology tool. Standard 30 may provide a National Institute ofStandards and Technology (NIST) traceable depth reading when measured bya profilometer or AFM, and a NIST traceable phase shift when measured bya phase metrology tool. Standard 30 may be formed from substrate 32,which may be quartz, synthetic quartz, fused silica, magnesium fluoride(MgF₂), calcium fluoride (CaF₂), silicon or any other suitable materialused to fabricate a photomask (e.g., photomask 12 as illustrated in FIG.1). Standard 30 may include calibration sites 34 and refraction sites 33and 35 that include a pattern of features used to calibrate a metrologytool. As illustrated, calibration sites 34 may be located at the fourcorners and center of substrate 32. In other embodiments, at least onecalibration site may be located within a mask field of standard 30 atany suitable position. Calibration sites 34 located at suitablepositions on substrate 32 provide the opportunity to verify that themeasurements provided by the metrology tools were not altered byphotomask position effects.

Refraction sites 33 and 35 may be clear areas of substrate 32 that allowthe index of refraction of substrate 32 to be confirmed. Refractionsites 33 and 35 may be formed by removing any absorber material formedon substrate 32 to expose the surface. Additionally, each of refractionssites 33 and 35 may have any suitable dimensions that allow the index ofrefraction to be measured. In one embodiment, refraction site 33 may bea trench in the surface of substrate 32 with a depth of approximately600 Angstroms. In another embodiment, the depth of the trench may be anyappropriate depth that allows a measurement tool to determine if theindex of refraction was modified by the etch process. In one embodiment,refraction site 35 may expose the surface of substrate 32.

The index of refraction of substrate 32 may be measured by, for example,a glancing angle Ellipsometer. An initial index of refraction may beknown when standard 30 is manufactured. If the measured index ofrefraction is different than the initial index of refraction, theinitial phase may be recalculated (as described above in reference toequations 1 through 3) by using the measured index of refraction. Anymeasured phase shifts obtained by the phase metrology tool, therefore,may be compared to the recalculated initial phase.

FIG. 3 illustrates a pattern of cells forming calibration sites 34 onstandard 30 used to calibrate a metrology tool. Calibration sites 34 mayinclude multiple cells 36 formed in a pattern such as an array. Forexample, the pattern may be a ten by ten (10×10) array where each ofcells 36 is separated from a neighboring cell by approximately twomillimeters (2 mm) such that the entire array covers an area ofapproximately two square centimeters (2 cm²) on substrate 32. The spacebetween each of cells 36 may be a clear area of substrate 32 or an areaof substrate 32 that includes a layer of material, such as the materialused to form a patterned layer of a photomask (e.g., patterned layer 18as illustrated in FIG. 1).

In another embodiment, the array may be rectangular in shape such thatit includes more cells across the width of the array than the length ofthe array or the opposite such that more cells are arranged over thelength of the array than the width of the array. Additionally, the arraymay be greater than or less than a ten by ten (10×10) array. In otherembodiments, the cells may be arranged in other patterns, including butnot limited to, a checkerboard, a reverse checkerboard or a cross.Multiple cells 36 may be used in each of calibration sites 34 to allowfor multiple site metrology and to ensure that a back-up site will beavailable if one of cells 36 is damaged during the measuring process inthe metrology tools.

FIG. 4 illustrates a top view of features formed in each of cells 36 onstandard 30 that is used to calibrate a metrology tool. Each of cells 36may include AFM features 38, profile features 40, 41 and 42 and phasefeatures 43 and 44. AFM features 38 may be checkerboard and/or reversecheckerboard patterns that may be used to calibrate an AFM tool. Whenstandard 30 is placed in an AFM tool, the pattern may be scanned bothvertically and horizontally to determine the step height of AFM features38. The measured step height may be compared to an initial NISTtraceable step height associated with AFM features 38. If the measuredstep height is not approximately equal to the initial step height, theAFM tool may be adjusted to correct for the difference in measured andinitial values.

In the illustrated embodiment, profile features 40, 41 and 42 and phasefeatures 43 and 44 may have different widths and different depths. Forexample, profile features 40 and phase features 43 may each have a widthof approximately five microns (5 μm), profile features 41 and phasefeatures 43 may each have a width of approximately ten microns (10 μm),and profile features 42 may each have a width of approximately twentymicrons (20 μm). The range of widths may prevent pattern loading effectsfrom occurring during the measuring process. In other embodiments,profile features 40, 41 and 42 and phase features 43 and 44 may havesimilar or different widths that are larger than the shearing areaand/or spot size of the metrology tool such that spot placement problemsare not created.

In the illustrated embodiment, AFM feature 38 a, profile features 40 a,41 a and 42 a, and phase features 43 a and 44 a may have a depth ofapproximately 2400 angstroms, which corresponds to a phase shift ofapproximately 180 degrees at an exposure wavelength of approximately 248nanometers. Additionally, AFM feature 38 b, profile features 40 b, 41 band 42 b, and phase features 43 b and 44 b may have a depth ofapproximately 1800 angstroms, which corresponds to a phase shift ofapproximately 180 degrees at an exposure wavelength of approximately 193nanometers. Finally, AFM feature 38 c, profile features 40 c, 41 c and42 c, and phase features 43 c and 44 c may have a depth of approximately1200 angstroms, which corresponds to a phase shift of approximately 180degrees at an exposure wavelength of approximately 157 nanometers. Thedifferent depths may be used to evaluate the linearity of the metrologymeasurements at different exposure wavelengths, for example, in a rangebetween approximately 100 nm and 400 nm.

In another embodiment, additional AFM, depth and phase features may beincluded in cells 36. The additional AFM, depth and phase features mayhave different depths that correspond to a phase shift of approximately180 degrees at other exposure wavelengths, such as 345 nanometers or 126nanometers. In a further embodiment, AFM features 38, profile features40, 41 and 42, and phase features 43 and 44 may have similar depths. Inother embodiments, the number of AFM, depth and phase features may beany appropriate number that allows profile and phase measurements to beobtained by numerous different types of metrology tools.

Phase features 43 and 44 may include an etched area surrounded by twosurface areas on substrate 32. The etched area may have a specific depthas described above and the surface areas may expose the surface ofsubstrate 32. A layer of absorber material, such as the material used toform patterned layer 18 as illustrated in FIG. 1, may be use to separatethe etched area from the surface areas.

AFM feature 38, profile features 40, 41 and 42 and phase features 43 and44 may be etched into substrate 32 using a hot KOH wet etch process thatremoves surface roughness, eliminates etch dependant depth variation andreduces depth variation across the photomask. In other embodiments,another wet etch process and/or any suitable dry etch process may beused. Although profile features 40, 41 and 42 and phase features 43 and44 are illustrated as having an etched area surrounded by one or moreclear areas of substrate 32, profile features 40, 41 and 42 and phasefeatures 43 and 44 may be formed by surrounding a clear area with one ormore etched areas.

Profile features 40, 41 and 42 may be used to calibrate both aprofilometer and a phase metrology tool. When standard 30 is placed in aprofilometer, profile features 40, 41 and/or 42 may be scanned todetermine the step height. As described above in reference to an AFM,the measured step height for profile features 40, 41 and/or 42 may becompared with an initial NIST traceable step height. If the measuredstep height is not approximately equal to the initial step height, theprofilometer may be adjusted to compensate for the error in the measuredstep height. Additionally, the measured step height may be used tocalculate an initial phase shift associated with each of profilefeatures 40, 41 and 42 using the equations 1 through 3 as describedabove.

Standard 30 may additionally be used to calibrate a phase metrologytool. When standard is exposed to electromagnetic radiation in the phasemetrology tool, the wave of light that emerges from the etched area ofprofile features 40, 41 and 42 and phase features 43 and 44 may have alonger wavelength than the wave of light that remains inside substrate32. Due to the difference in wavelengths between the wave emerging fromthe different areas of substrate 32, a phase shift may occur. The phasemetrology tool measures the phase shift associated with profile features40, 41 and 42 and/or phase features 43 and 44, and compares the measuredphase shift with an initial phase shift associated with standard 30. Ifthe measured phase shift is not approximately equal to the initial phaseshift, the phase metrology tool may be adjusted to compensate for theerror in the measured phase shift. As an additional determination of thecalibration of both the profilometer and the phase metrology tool, themeasured phase shift may additionally be compared to the phase shiftcalculated with a step height obtained by a profilometer.

In one embodiment, the field of view for a phase metrology tool may beadjusted such that the phase metrology tool only measures phase features43 and 44. Phase features 43 and 44 may provide a decreased amount ofillumination compared to the amount of illumination created by profilefeatures 40, 41 and 42 when each of the features are measured by a phasemetrology tool. As such, phase features 43 and 44 may provide a patternthat concentrates the illumination from the phase metrology tool ontothe features, which provides an accurate measurement of the phase shiftassociated with phase features 43 and 44.

FIG. 5 illustrates a cross sectional view of profile features 40, 41 and42 formed in each of cells 36 on standard 30 used to calibrate ametrology tool. In the illustrated embodiment, profile features 40, 41and 42 may be formed in substrate 32 such that no material is locatednear the edges of profile features 40, 41 and 42 formed in substrate 32.In another embodiment, a layer of material may be located apredetermined distance from the edges such that the material separateseach of profile features 40, 41 and 42. The material layer may be anytype of material that is used to fabricate a photomask.

FIG. 6 illustrates a top view of phase features 43 and 44 formed in eachof cells 36 on standard 30 used to calibrate a metrology tool. Phasefeature 43 may include etched area 45 and surface areas 46 a and 46 band phase feature 44 may include etched area 47 and surface areas 48 aand 48 b. In one embodiment, the spaces between etched area 45 andsurface areas 46 a and 46 b and the spaces between etched area 47 andsurfaces areas 48 a and 48 b may be substantially covered by an absorbermaterial, e.g., the absorber materials used to form patterned layer 18as illustrated in FIG. 1. In another embodiment, the spaces betweenetched area 45 and surface areas 46 a and 46 b and the spaces betweenetched area 47 and surface areas 48 a and 48 b may be partially coveredby the absorber material, such that a portion of the surface ofsubstrate 32 is exposed near the edges of etched areas 45 and 47. Infurther embodiments, phase features 43 and 44 may be formed by placing asurface area between two etched areas.

Phase feature 43 may be optimized for use on a phase metrology toolhaving a five to ten micrometer (5 to 10 μm) shearing distance. In theillustrated embodiment, each of etched area 45 and surfaces areas 46 aand 46 b may be approximately five micrometers wide (5 μm) andapproximately thirty micrometers long (30 μm). In other embodiments,each of etched area 45 and surface areas 46 a and 46 b may be anyappropriately sized shapes. Additionally, etched area 45 may beseparated from surface areas 46 a and 46 b by approximately fivemicrometers (5 μm). In another embodiment, the areas may be separated byany suitable distance to allow the phase metrology tool to obtain theproper measurements.

Phase feature 44 may be optimized for use on a phase metrology tool havea shearing distance of approximately ten to fifteen micrometers (10 to15 μm). In the illustrated embodiment, each of etched area 47 andsurface areas 48 a and 48 b may be approximately ten micrometers (10 μm)wide and approximately one-hundred micrometers (100 μm) long. In otherembodiments, each of etched area 47 and surface areas 48 a and 48 b maybe any appropriately sized shapes. Additionally, etched area 47 may beseparated from surface areas 48 a and 48 b by approximately fivemicrometers (5 μm). In another embodiment, the areas may be separated byany suitable distance to allow the phase metrology tool to obtain theproper measurements.

FIG. 7 illustrates AFM feature 38 that may be used as a surfacetopography standard to calibrate an AFM. AFM feature 38 may includeetched features 50 and surface features 52. Etched features 50 may havea predetermined depth, such a depth that produces a phase shift of 180degrees at an exposure wavelength. Surface features 52 may be formedfrom substrate 32. In one embodiment, the pitch of the checkerboardpattern may be approximately four microns. AFM feature 38 may be scannedhorizontally and vertically in an AFM to create a histogram of thescanned pattern heights that may be used to determine the step height ofAFM features 38.

Although the present invention has been described with respect to aspecific preferred embodiment thereof, various changes and modificationsmay be suggested to one skilled in the art and it is intended that thepresent invention encompass such changes and modifications fall withinthe scope of the appended claims.

1. A method for calibrating a metrology tool, comprising: providing asubstrate including at least one calibration site, the calibration siteincluding a pattern of cells; providing at least one feature in each ofthe cells, the at least one feature disposed in a surface of thesubstrate; measuring the feature using a phase metrology tool to providea measured phase shift; comparing the measured phase shift with aninitial phase shift associated with the feature; and adjusting the phasemetrology tool if the measured phase shift does not match the initialphase shift.
 2. The method of claim 1, further comprising: measuring thefeature using a step height metrology tool to provide a measured depth;comparing the measured depth with an initial depth associated with thefeature; and adjusting the step height metrology tool if the measureddepth does not match the initial depth.
 3. The method of claim 1,further comprising the phase metrology tool including an exposurewavelength between approximately 100 nanometers and approximately 400nanometers.
 4. The method of claim 3, further comprising the featureincluding a depth operable to produce a phase shift of approximately 180degrees at the exposure wavelength.
 5. The method of claim 1, furthercomprising providing a plurality of calibration sites formed on thesubstrate, a first calibration site located in a center of the substrateand a second calibration site located proximate an edge of thesubstrate.
 6. The standard of claim 1, further comprising forming thefeature in the substrate using a wet etch process.